Extremely high-gain source-gated transistors
Publication Date: 29 January, 2019
Department of: Electrical and Electronic Engineering
A record amplification gain of 29,000 achieved by innovation of transistor design
The advent of thin-film electronics and the development of new materials, such as oxide semiconductors, bring great opportunities for new device designs and applications. Researchers at The University of Manchester have created a source-gated transistor (SGT) by combining two fundamental building blocks of electronics: a thin-film transistor (TFT) and a Schottky diode. By developing a method to control the current at the source contact, an extremely high voltage amplification gain of 29,000 is achieved. This is orders of magnitude higher than that of a conventional Si transistor widely used in consumer electronics. The SGT also demonstrates far better stability than other oxide semiconductor TFTs, overcoming the main bottleneck to using oxide semiconductors in major applications, such as displays. Furthermore, unlike ordinary oxide semiconductor TFTs, SGTs with channel lengths down to 360 nm display no obvious performance degradation (short-channel effects), demonstrating their suitability for high-density integrated circuits. Finally, although the channel material of conventional transistors must be a semiconductor, by demonstrating a high-performance SGT with an oxide conductor channel, the range of transistor materials has been significantly broadened. Combined with an analytical theory, these advantages show SGTs to be a new fundamental component for the thin-film electronics community.
- Novel transistor designed by combining two fundamental building blocks of electronics: a thin-film transistor and a Schottky diode
- Achieving total immunity to light illumination, which was not possible before with oxide semiconductors
- A record amplification gain of 29,000 is achieved, previously unthinkable with a single transistor.